Search results for "semiconductor material"
showing 10 items of 24 documents
Correlated barrier hopping in NiO films
1991
The ac conduction in NiO films has been investigated in the frequency range 10 Hz < v < 10^9 Hz and at temperatures between 10 and 300 K. The frequency and the temperature dependence of the electrical conductivity can be consistently explained within a model developed for the mechanism of charge transfer in amorphous semiconductors which proposes that charge carriers hop over potential barriers between defect sites, the height of the barriers being correlated with the intersite separation.
Heusler Compounds—A Material Class With Exceptional Properties
2011
The class of Heusler compounds, including the XYZ and the X2YZ compounds, has not only an endless number of members, but also a vast variety of properties can be found in this class of materials, ranging from semiconductors, half-metallic ferromagnets, superconductors, and topological insulators to shape memory alloys. With this review article, we would like to provide an overview of Heusler compounds, focusing on their structure, properties, and potential applications.
X-ray-absorption fine-structure study of ZnSexTe1−x alloys
2004
X-ray-absorption fine-structure experiments at different temperatures in ZnSexTe1−x (x=0, 0.1, 0.2, 0.55, 0.81, 0.93, 0.99, and 1.0) have been performed in order to obtain information about the structural relaxation and disorder effects occurring in the alloys. First and second neighbor distance distributions have been characterized at the Se and Zn K edges, using multiple-edge and multiple-scattering data analysis. The first neighbor distance distribution was found to be bimodal. The static disorder associated with the Zn–Te distance variance did not depend appreciably on composition. On the other hand, the static disorder associated with the Zn–Se distance increased as the Se content dimi…
Polymeric carbon nitride (C3N4) as heterogeneous photocatalyst for selective oxidation of alcohols to aldehydes
2018
Abstract Polymeric carbon nitride (C3N4) is a semiconductor material which is a very promising green photocatalyst with good physico-chemical properties and stability. It is a metal-free carbon based non-toxic material which can be easily obtained from earth-abundant components. The robustness and versatility of C3N4 as a photo-redox catalyst allows its use for selective oxidations by heterogeneous photocatalysis. This paper reviews the state of art in the application of C3N4 as heterogeneous photocatalyst for selective oxidation of alcohols to the corresponding aldehydes.
Space charge limited current mechanism in Bi2S3 nanowires
2016
We report on the charge transport properties of individual Bi2S3 nanowires grown within the pores of anodized aluminum oxide templates. The mean pore diameter was 80 nm. Space charge limited current is the dominating conduction mechanism at temperatures below 160 K. Characteristic parameters of nanowires, such as trap concentration and trap characteristic energy, were estimated from current-voltage characteristics at several temperatures.
Photoconductive properties of Bi2S3nanowires
2015
The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane…
Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy
1997
Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…
Inkjet Printable ZnO/PEDOT:PSS Heterojunction for Thin Flexible Semi-Transparent Optoelectronic Sensors
2020
International audience; Flexible sensors play an increasing role in printed electronics and are of interest for optoelectronic applications in flexible robotics and industrial automation. Thus, we have investigated the hybrid inorganic-organic junction between ZnO and PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate). A thin ITO (indium tin oxide) layer on PET (polyethylene terephthalate) foils was used as substrate electrode. ZnO was deposited from a nanoparticle (NP) suspension by electrophoretic deposition. For comparison, we have used three different methods for the deposition of PEDOT:PSS, namely (i) drop casting, (ii) dip-coating, (iii) inkjet printing. For the result…
Defect reactions of implanted Li in ZnSe observed by β-NMR
2001
Abstract Using β-radiation detected nuclear magnetic resonance (β-NMR), we investigated the microscopic behavior of implanted 8 Li in nominally undoped ZnSe crystals. From the temperature-dependent amplitudes of high-resolution NMR spectra we conclude a gradual interstitial-to-substitutional site change between 200 and 350 K . This is in accordance with earlier emission channeling results. We argue that this conversion proceeds via Lii++VZn2−→LiZn− and involves implantation related Zn vacancies.
Virtual Resource Allocation for Wireless Virtualized Heterogeneous Network with Hybrid Energy Supply
2022
In this work, two novel virtual user association and resource allocation algorithms are introduced for a wireless virtualized heterogeneous network with hybrid energy supply. In the considered system, macro base stations (MBSs) are supplied by the grid power and small base stations (SBSs) have the energy harvesting capability in addition to the grid power supplement. Multiple infrastructure providers (InPs) own the physical resources, i.e., BSs and radio resources. The Mobile Virtual Network Operators (MVNOs) are able to recent these resources from the InPs and operate the virtualized resources for providing services to different users. In particular, aiming to maximize the overall utility …